First of all, the most direct way to increase the brightness of power LEDs is to increase the input power. In order to prevent the saturation of the active layer, the size of the p-n junction must be increased accordingly; increasing the input power will inevitably increase the junction temperature, thereby reducing the quantum efficiency. The improvement of single-tube power depends on the ability of the device to dissipate heat from the pn junction, while maintaining the existing chip material, structure, packaging process, current density on the chip and equivalent heat dissipation conditions, increasing the size of the chip alone, the junction area. The temperature will keep rising.
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